2023年7月25日发(作者：)
专利内容由知识产权出版社提供专利名称：SPIN-ON-DIELECTRIC PROCESS发明人：Jui-Min Lee,Ching-Hsiang Chang,Cheng-HsuHuang,Yi-Wei Chen,Wei-Hsin Liu,Shih-FangTzou申请号：US15939305申请日：20180329公开号：US2A1公开日：20181220专利附图：摘要：A spin-on-dielectric process includes the following steps. A substrate isprovided. A flowable material is spread on a surface of the substrate to forma spin-on-dielectric layer on the substrate, wherein the flowable material is heated to atemperature higher than 25° C.申请人：UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.地址：Hsin-Chu City TW,Quanzhou City CN国籍：TW,CN更多信息请下载全文后查看
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