2024年3月9日发(作者：北京新增本土1185+1488)

SPTECH 2SC2073

SPTECHSiliconNPNPowerTransistor2SC2073

DESCRIPTION

·Collector-EmitterBreakdownVoltage-

:V

(BR)CEO

=150V(Min)

·WideAreaofSafeOperation

·ComplementtoType2SA940

APPLICATIONS

·Poweramplifierapplications.

·Verticaloutputapplications.

ABSOLUTEMAXIMUMRATINGS(T

a

=25

℃)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

PARAMETER

Collector-BaseVoltage

Collector-EmitterVoltage

Emitter-BaseVoltage

CollectorCurrent-Continuous

BaseCurrent-Continuous

CollectorPowerDissipation

@T

a

=25℃

CollectorPowerDissipation

@T

C

=25℃

JunctionTemperature

StorageTemperatureRange

VALUE

150

150

5

1.5

0.5

1.5

W

25

150

-55~150

℃

℃

UNIT

V

V

V

A

A

P

C

T

J

T

stg

1

SPTECH 2SC2073

SPTECHSiliconNPNPowerTransistor

ELECTRICALCHARACTERISTICS

T

C

=25℃unlessotherwisespecified

SYMBOLPARAMETER

Collector-EmitterSaturationVoltage

CONDITIONS

I

C

=500mA;I

B

=50mA

1.5

UNIT

V

2SC2073

V

CE

(sat)

V

BE

(on)

I

CBO

Base-EmitterOnVoltageI

C

=500mA;V

CE

=10V0.85V

CollectorCutoffCurrentV

CB

=120V;I

E

=010μA

I

EBO

EmitterCutoffCurrentV

EB

=5V;I

C

=010μA

h

FE

DCCurrentGainI

C

=500mA;V

CE

=10V40140

C

OB

OutputCapacitance

I

E

=0;V

CB

=10V;f

test

=1MHz

I

C

=500mA;V

CE

=10V

35pF

f

T

Current-Gain—BandwidthProduct4MHz

2