2024年5月2日发(作者：宽带711错误一键修复)
专利内容由知识产权出版社提供
专利名称：Semiconductor contact barrier
发明人：Chung-Shi Liu,Chen-Hua Yu
申请号：US12019396
申请日：20080124
公开号：US07897514B2
公开日：20110301
专利附图：
摘要：System and method for reducing contact resistance and improving barrier
properties is provided. An embodiment comprises a dielectric layer and contacts
extending through the dielectric layer to connect to conductive regions. A contact barrier
layer is formed between the conductive regions and the contacts by electroless plating
the conductive regions after openings have been formed through the dielectric layer for
the contact. The contact barrier layer is then treated to fill the grain boundary of the
contact barrier layer, thereby improving the contact resistance. In another embodiment,
the contact barrier layer is formed on the conductive regions by electroless plating prior
to the formation of the dielectric layer.
申请人：Chung-Shi Liu,Chen-Hua Yu
地址：Hsin-Chu TW,Hsin-Chu TW
国籍：TW,TW
代理机构：Slater & Matsil, L.L.P.
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