2024年4月23日发(作者：)
专利内容由知识产权出版社提供
专利名称：Sputtering apparatus and film
manufacturing method
发明人：Morimoto, Naoki 2-7, Senpukugaoka 2-
chome,Kondo, Tomoyasu 1888-33,
Higashitanaka,Nagashima, Hideto 311
Haitsu-gotenba
申请号：EP01121383.2
申请日：20010906
公开号：EP1187172A2
公开日：20020313
专利附图：
摘要：In order to form a thin film having a high aspect ratio, a space between a target
within a vacuum chamber and a substrate table is enclosed by an anode electrode and
earth electrodes. The anode electrode is positioned on the side of the target, and a
positive voltage is applied. The earth electrodes are positioned on the side of the
substrate table and are connected to earth potential. A trajectory of sputtering particles
curved in the direction of flying off by the anode electrode is corrected and is made
incident in a perpendicular manner to a surface of the substrate on the substrate table.
The amount of sputtering particles incident to the surface of the substrate can therefore
be increased and made perpendicularly incident; and a thin film of a high aspect ratio can
be formed.
申请人：ULVAC, INC.
地址：2500 Hagisono Chigasaki-shi, Kanagawa 253-8543 JP
国籍：JP
代理机构：Körber, Wolfhart, Dr.
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