2024年4月16日发(作者：)

Wuxi PWChip Semi

Technology CO., LTD

代理

深圳夸克微科技

PW2301A

P-Channel Enhancement Mode MOSFET

GENERAL DESCRIPTION

The PW2301A uses advanced trench It utilizes the latest processing techniques to achieve the high

cell density and reduces the on-resistance with high repetitive avalanche rating. These features

combine to make this design an extremely efficient and reliable device for use in power switching

application and a wide variety of other applications .

FEATURES



VDS = -20V, ID = -3A

RDS(ON) < 110mΩ @ VGS=4.5V

Available in a 3-Pin SOT23-6 Package

G

S

A1SHB

SOT-23-3L

(TOP VIEW)

D

S

G

D

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current -Pulsed

(Note 1)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Symbol

V

DS

V

GS

I

D

I

DM

P

D

T

J

,T

STG

Limit

-20

±12

-3

-10

1

-55 To 150

Unit

V

V

A

A

W

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note 2)

R

θJA

125

℃/W

PW2301A_1.1

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Wuxi PWChip Semi

Technology CO., LTD

PW2301A

ELECTRICAL CHARACTERISTICS

(TA = 25°C, unless otherwise noted.)

Parameter

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Symbol

Condition

BV

DSS

I

DSS

I

GSS

V

GS(th)

R

DS(ON)

g

FS

C

lss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

V

SD

I

S

V

GS

=0V I

D

=-250μA

V

DS

=-20V,V

GS

=0V

V

GS

=±12V,V

DS

=0V

Min

Typ

Max

Unit

-20

-

-

-24

-

-

-

-1

V

μA

Parameter

Gate-Body Leakage Current

On Characteristics

(Note 3)

Gate Threshold Voltage

Drain-Source On-State Resistance

Forward Transconductance

Dynamic Characteristics

(Note4)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

(Note 4)

Turn-on Delay Time

Turn-on Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

Diode Forward Current

(Note 2)

Symbol

Condition

Min

Typ

Max

Unit

±100

nA

V

mΩ

mΩ

S

PF

PF

PF

nS

nS

nS

nS

nC

nC

nC

V

A

V

DS

=V

GS

,I

D

=-250μA

-0.4

V

GS

=-4.5V, I

D

=-3A

V

GS

=-2.5V, I

D

=-2A

V

DS

=-5V,I

D

=-2A

-

-0.7

-1

64

89

-

110

140

-

5

-

-

-

-

-

-

-

-

-

-

-

-

V

DS

=-10V,V

GS

=0V,

F=1.0MHz

405

-

75

55

11

35

30

10

3.3

0.7

1.3

-

-

-

-

-

-

-

-

12

-

-

-1.2

-3

V

DD

=-10V,I

D

=-1A

V

GS

=-

4.5V,R

GEN

=10Ω

V

DS

=-10V,I

D

=-3A,

V

GS

=-2.5V

V

GS

=0V,I

S

=1.3A

-

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. PINGWEI DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. PINGWEI RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

PW2301A_1.1

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