2024年3月23日发(作者：摩托罗拉刀锋怎么样)

【

南京南山半导体有限公司 — 长电三极管选型资料

】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO – 92

TO-92 Plastic-Encapsulate Transistors

1. EMITTER

2. COLLECTOR

3. BASE

2SA673

TRANSISTOR (PNP)

FEATURES

z Low Frequency Amplifier

z Complementary Pair with 2SC1213

=

=

=

=

=

=

=

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol Parameter Value Unit

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θJA

T

j

T

stg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

-35

-35

-4

-0.5

400

312

150

-55~+150

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Symbol

V

(BR)CBO

V

(BR)CEO

I

CBO

I

EBO

h

FE(1)

h

FE(2)

V

CE(sat)

V

BE

*

*

Test conditions Min Typ Max

Unit

V

V

V

I

C

=-0.01mA,I

E

0 -35

I

E

=-0.01mA,I

C

0 -4

I

C

=-1mA,I

B

0 -35

V

(BR)EBO

V

CB

=-20V,I

E

0 -0.5 μA

V

EB

=-3V,I

C

0 -0.5 μA

V

CE

=-3V, I

C

-10mA 60

V

CE

=-3V, I

C

-500mA 10

V

CE

=-3V, I

C

=-10mA

320

V

I

C

=-150mA,I

B

=-15mA

-0.6 V

-0.75

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

CLASSIFICATION OF h

FE(1)

RANK

RANGE

60-120 100-200 160-320

B C D

A,Dec,2010

【

南京南山半导体有限公司 — 长电三极管选型资料

】

Symbol

A

A1

b

c

D

D1

E

e

e1

L

Φ

h

Dimensions In Millimeters

.

3.3003.700

1.1001.400

0.3800.550

0.3600.510

4.3004.700

3.430

4.3004.700

1.270 TYP.

2.4402.640

14.10014.500

1.600

0.0000.380

Dimensions In Inches

.

0.1300.146

0.0430.055

0.0150.022

0.0140.020

0.1690.185

0.135

0.1690.185

0.050 TYP.

0.0960.104

0.5550.571

0.063

0.0000.015