2024年4月23日发(作者：)
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专利名称：Semiconductor latches and SRAM devices
发明人：Raminda Udaya Madurawe
申请号：US10851752
申请日：20040524
公开号：US2A1
公开日：20041028
专利附图：
摘要：A new Static Random Access Memory (SRAM) cell using a restoring device and a
strong inverter is disclosed. An SRAM cell comprises a strong inverter and a strong
access transistor constructed on a high-mobility semiconductor substrate layer. An N to
1 programmable multiplexer positioned above the inverter provides the input to said
strong inverter from N available discrete voltage levels. A high mobility conducting path
is used to read data quickly, while very small programmable elements vertically
integrated in one or more planes increase the storage density at no extra area penalty. N
data values are stored in one latch location, reducing memory area and cost significantly
without sacrificing on time to access the stored data.
申请人：MADURAWE RAMINDA UDAYA
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