2024年4月11日发(作者：)

专利内容由知识产权出版社提供

专利名称：Epitaxial substrate, semiconductor element,

manufacturing method for epitaxial

substrate and method for unevenly

distributing dislocations in group III nitride

crystal

发明人：Shibata, Tomohiko

申请号：EP06113690.9

申请日：20060509

公开号：EP1724378A2

公开日：20061122

专利附图：

摘要：The present invention provides an epitaxial substrate which is appropriate for

the generation of a group III nitride crystal having excellent crystal quality. An upper

layer 2 of a group III nitride is formed on a sapphire base with an off angle, and after that

a heating process is performed at a temperature not lower than 1500°C, preferably not

lower than 1650°C, and thereby, the crystal quality of the upper layer 2 is improved and

repeating steps of which the size is greater than the height of several atomic layers are

provided on the surface of the upper layer 2, and thus obtained epitaxial substrate 10 is

used as a base substrate for growing a group III nitride crystal layer 3. The group III

nitride crystal grows from the points of steps in a manner of step flow, and therefore,

threading dislocations from the upper layer 2 are bent according to this growth, and are

unevenly distributed as the crystal grows afterwards. The obtained group III nitride

crystal layer 3 has an excellent surface flatness, and most portions in the vicinity of the

surface become low dislocation regions where the density of dislocations is

approximately 1 × 107/cm2. That is, it can be said that the epitaxial substrate 10 is

appropriate for the formation of a group III nitride crystal having excellent crystal

quality.

申请人：NGK INSULATORS, LTD.

地址：2-56, Suda-cho, Mizuho-ku Nagoya City, Aichi Pref. JP

国籍：JP

代理机构：TBK-Patent

更多信息请下载全文后查看