2024年4月11日发(作者：)
专利内容由知识产权出版社提供
专利名称：POLYCRYSTALLINE SILICON THIN FILM
TRANSISTOR AND METHOD OF
FABRICATING THE SAME, AND DISPLAY
APPARATUS
发明人：Jian MIN,Xiaolong LI,Tao GAO,Liangjian
LI,Zhengyin XU
申请号：US15543726
申请日：20160725
公开号：US2A1
公开日：20181115
专利附图：
摘要：The present application discloses a method of fabricating a polycrystalline
silicon thin film transistor, the method including forming an amorphous silicon layer on a
base substrate having a pattern corresponding to a polycrystalline silicon active layer of
the thin film transistor; the amorphous silicon layer having a first region corresponding to
a source electrode and drain electrode contact region in the polycrystalline silicon active
layer and a second region corresponding to a channel region in the polycrystalline silicon
active layer; forming a first dopant layer on a side of the second region distal to the base
substrate; forming a second dopant layer on a side of the first region distal to the base
substrate; and crystallizing the amorphous silicon layer, the first dopant layer, and the
second dopant layer to form the polycrystalline silicon active layer, the polycrystalline
silicon active layer being doped with a dopant of the first dopant layer in the second
region and doped with a dopant of the second dopant layer in the first region during the
step of crystallizing the amorphous silicon layer.
申请人：BOE TECHNOLOGY GROUP CO., LTD.
地址：Beijing CN
国籍：CN
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