2024年4月11日发(作者：)

mocvd半导体外延生长流程

英文回答：

Metalorganic Chemical Vapor Deposition (MOCVD)

Semiconductor Epitaxy Growth Process.

Metalorganic chemical vapor deposition (MOCVD) is a

chemical vapor deposition (CVD) technique used to deposit

thin films of semiconductors. In MOCVD, metalorganic

precursors are used as the source of the metal atoms, and a

carrier gas is used to transport the precursors to the

growth substrate. The precursors react with each other on

the substrate surface to form the desired semiconductor

material.

The MOCVD process can be divided into three main steps:

1. Precursor delivery: The metalorganic precursors are

vaporized and transported to the growth substrate by a

carrier gas. The precursors are typically heated to a high

temperature to ensure that they vaporize completely.

2. Surface reaction: The precursors react with each

other on the substrate surface to form the desired

semiconductor material. The reaction conditions, such as

the temperature and pressure, are carefully controlled to

ensure that the desired material is deposited.

3. Film growth: The semiconductor material is deposited

on the substrate surface in a thin film. The thickness of

the film is controlled by the deposition time and the flow

rate of the precursors.

MOCVD is a versatile technique that can be used to

deposit a wide variety of semiconductor materials. The

process is well-suited for the deposition of thin films

with precise control over the film composition and

thickness. MOCVD is used in the fabrication of a variety of

electronic devices, including LEDs, lasers, and transistors.

中文回答：

金属有机化学气相沉积 (MOCVD) 半导体外延生长流程。

金属有机化学气相沉积 (MOCVD) 是一种化学气相沉积 (CVD)

技术，用于沉积半导体的薄膜。在 MOCVD 中，金属有机前驱体用作

金属原子的来源，载气用于将前驱体输送到生长衬底。前驱体在基

板表面上相互反应，形成所需的半导体材料。

MOCVD 工艺可分为三个主要步骤：

1. 前驱体输送，金属有机前驱体被汽化并通过载气输送到生长

衬底。前驱体通常被加热到高温以确保它们完全汽化。

2. 表面反应，前驱体在基板表面上相互反应，形成所需的半导

体材料。反应条件，如温度和压力，被仔细控制以确保沉积所需的

材料。

3. 薄膜生长，半导体材料以薄膜形式沉积在基板表面。薄膜的

厚度由沉积时间和前驱体的流速控制。

MOCVD 是一种多功能技术，可用于沉积各种半导体材料。该工

艺非常适合沉积薄膜，并可以精确控制薄膜的成分和厚度。MOCVD

用于制造各种电子器件，包括 LED、激光器和晶体管。