2024年4月11日发(作者：)

碳化硅衬底核心要素

英文回答：

The core elements of a silicon carbide substrate can be

summarized as follows:

1. Material Properties: Silicon carbide (SiC) is a

compound semiconductor material known for its excellent

thermal conductivity, high breakdown electric field

strength, and wide bandgap. These properties make SiC a

suitable choice for high-power and high-temperature

applications.

For example, SiC substrates are widely used in power

electronic devices such as MOSFETs and Schottky diodes. The

high thermal conductivity of SiC allows for efficient heat

dissipation, while the wide bandgap enables the devices to

operate at higher voltages and temperatures.

2. Crystal Structure: SiC can exist in different

polytypes, with the most common ones being 4H-SiC and 6H-

SiC. The crystal structure of SiC influences its electrical

and optical properties. For instance, the 4H-SiC polytype

is often preferred for high-power applications due to its

higher electron mobility.

3. Substrate Quality: The quality of the SiC substrate

is crucial for device performance. It includes factors such

as crystal defects, surface roughness, and doping levels.

High-quality SiC substrates are essential to ensure the

reliability and efficiency of the devices fabricated on

them.

For example, a low defect density in the SiC substrate

can lead to higher breakdown voltage and lower leakage

current in power devices. Smooth surface morphology is also

important for the growth of epitaxial layers and the

integration of other materials.

4. Epitaxial Growth: Epitaxy refers to the deposition

of a crystalline layer on a substrate with a similar

crystal structure. In SiC technology, epitaxial growth is

commonly used to create a thin layer with specific doping

and thickness requirements.

For example, SiC epitaxial layers can be grown on SiC

substrates to create a p-n junction for diode applications.

The epitaxial layer can be doped with impurities to achieve

the desired electrical characteristics.

中文回答：

碳化硅衬底的核心要素可以总结如下：

1. 材料特性，碳化硅（SiC）是一种复合半导体材料，以其优

异的热导率、高击穿电场强度和宽禁带宽度而闻名。这些特性使得

SiC成为高功率和高温应用的合适选择。

例如，SiC衬底广泛应用于功率电子器件，如MOSFET和肖特基

二极管。碳化硅的高热导率可以实现高效的热散，而宽禁带宽度使

得器件能够在更高的电压和温度下工作。

2. 晶体结构，碳化硅可以存在不同的多型，其中最常见的是

4H-SiC和6H-SiC。碳化硅的晶体结构影响其电学和光学特性。例如，

由于其较高的电子迁移率，4H-SiC多型通常被用于高功率应用。

3. 衬底质量，碳化硅衬底的质量对器件性能至关重要。它包括

晶体缺陷、表面粗糙度和掺杂水平等因素。高质量的碳化硅衬底对

确保器件的可靠性和效率至关重要。

例如，碳化硅衬底中较低的缺陷密度可以导致功率器件具有更

高的击穿电压和较低的漏电流。光滑的表面形貌对于外延层的生长

和其他材料的集成也很重要。

4. 外延生长，外延是指在具有相似晶体结构的衬底上沉积晶体

层。在碳化硅技术中，外延生长常用于创建具有特定掺杂和厚度要

求的薄层。

例如，可以在碳化硅衬底上生长碳化硅外延层，用于二极管应

用中的p-n结。外延层可以通过掺杂杂质来实现所需的电学特性。